Asif Khan received his Ph.D. in electrical engineering and computer sciences from the University of California, Berkeley in 2015 and his B.S. degree in electrical and electronic engineering from Bangladesh University of Engineering and Technology (BUET) in 2007. He joined the School of Electrical and Computer Engineering at the Georgia Institute of Technology as a tenure-track assistant professor in the Spring of 2017.
Dr. Khan’s interests lie at the intersection of electrical engineering, materials science, and the physics of computation. Computing nanodevices that leverage new physics and phenomena in emerging material systems (such as ferro-/anti-ferroelectrics, multiferroics, complex and transition metal oxides and correlated electron systems) are the mainstay of his group. The end goal of his research is to synergize these device-level innovations with existing or new circuits, architectures, and systems concepts such that classical limitations of CMOS platforms can be transcended and new computing paradigms can be envisioned. His work led to the first experimental proof-of-concept demonstration of the negative capacitance–a novel physical phenomenon that can lead to ultra-low power computing and memory platforms by overcoming the fundamental "Boltzmann Limit" of 60 mV/decade subthreshold swing in field-effect transistors.
Dr. Khan received the Qualcomm Innovation Fellowship in 2012, the Silver prize at the 5th Taiwan Semiconductor Manufacturing Company (TSMC) Outstanding Student Research Award in 2011, the University Gold medal from BUET in 2011, Kintarul Haque Gold Medal from BUET in 2011, the 1st prize in IEEE Region 10 Undergraduate Student Paper Contest in 2006, and the 2nd prize in the IEEE History Society Undergraduate Student Paper Contest in 2004.
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