Semiconductor materials and devices have become ubiquitous in our daily lives, enabling modern home appliances, toys, computing and communication devices, transportation systems, and medical equipment. While the vast majority of today’s semiconductor devices is based on silicon, research looks beyond silicon (“more-than-Moore”) and explores next-generation semiconductor materials, technologies and devices.
At Georgia Tech, semiconductor research spans the full spectrum from materials research to process and device development, to circuits and systems. On the materials side, researchers use IEN facilities to explore graphene as a next-generation semiconductor, to grow wide bandgap semiconductors via metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), to investigate thin-film oxide semiconductors, to process semiconductor nanostructures, to deposit and characterize new dielectric materials, and to explore semiconducting organic materials. This material research forms the base for a wide range of device development efforts, such as III-N based high-voltage field-effect transistors and heterojunction bipolar transistors, compound-semiconductor-based optoelectronic devices, semiconductor power devices, thin-film transistors and sensors, memristors and organic transistors. Finally, on the circuits and systems side, Georgia Tech researchers explore e.g. RF/microwave/mm-wave integrated circuits using III-V and SiGe technologies. Experimental research activities are supported on all levels by extensive modeling efforts.